Study of hydrogenated amorphous silicon nitride films prepared by RF magnetron sputtering

Anirban Bandyopadhyay; Tarun Kanti Bhattacharyya; Ratnabali Banerjee; A. K. Batabyal; A. K. Barua

doi:10.1007/bf00324776

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Study of hydrogenated amorphous silicon nitride films prepared by RF magnetron sputtering

Anirban Bandyopadhyay Tarun Kanti Bhattacharyya Ratnabali Banerjee A. K. Batabyal A. K. Barua

Year: 1991 Journal: Applied Physics A Vol: 52 (5)Pages: 339-343 Publisher: Springer Science+Business Media

DOI: 10.1007/bf00324776

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Keywords:

Sputter deposition Materials science Sputtering Analytical Chemistry (journal) Electron cyclotron resonance Glow discharge Amorphous solid Nitride Silicon nitride Chemical vapor deposition Hydrogen Amorphous silicon Silicon Optoelectronics Thin film Plasma Chemistry Crystalline silicon Nanotechnology Layer (electronics)

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Study of hydrogenated amorphous silicon nitride films prepared by RF magnetron sputtering

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