Hot Implantation of Nitrogen Ions into GaAs1-xPx(x=0.36)

Yunosuke Makita; Shun‐ichi Gonda; H. Tanoue; T. Tsurushima; Shigeru Maekawa

doi:10.1143/jjap.13.563

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Hot Implantation of Nitrogen Ions into GaAs_1-xP_x(x=0.36)

Yunosuke Makita Shun‐ichi Gonda H. Tanoue T. Tsurushima Shigeru Maekawa

Year: 1974 Journal: Japanese Journal of Applied Physics Vol: 13 (3)Pages: 563-564 Publisher: Institute of Physics

DOI: 10.1143/jjap.13.563

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Keywords:

Nitrogen Ion Ion implantation Materials science Analytical Chemistry (journal) Atomic physics Crystallography Chemistry Physics Environmental chemistry

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Hot Implantation of Nitrogen Ions into GaAs_1-xP_x(x=0.36)

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Hot Implantation of Nitrogen Ions into GaAs1-xPx(x=0.36)

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Related Documents

Laser Emission in Nitrogen-Implanted GaAs1-xPx(x=0.36 and 0.43)

Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs1-xPx(x=0.36)

Band Structures of GaAs1−xPx and In1−xGaxP

Photoluminescence of Indirect-Band-Gap GaAs1-xPx(x=0.52) Implanted with Nitrogen Ions

Electroplated Au-GaAs 1− x P x and Au-Ga 1− x Al x As Schottky barriers

Hot Implantation of Nitrogen Ions into GaAs_1-xP_x(x=0.36)

Laser Emission in Nitrogen-Implanted GaAs_1-xP_x(x=0.36 and 0.43)

Annealing Temperature Dependence of Photoluminescence in N-Implanted GaAs_1-xP_x(x=0.36)

Band Structures of GaAs_1−xP_x and In_1−xGa_xP

Photoluminescence of Indirect-Band-Gap GaAs_1-xP_x(x=0.52) Implanted with Nitrogen Ions

Electroplated Au-GaAs _{1− x} P _x and Au-Ga _{1− x} Al _x As Schottky barriers