Electroplated Au-GaAs 1− x P x and Au-Ga 1− x Al x As Schottky barriers

M. López-Coronado; Miguel Aguilar; Manuel Martı́nez; E. Calleja; E. Muñoz

doi:10.1049/el:19830454

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Electroplated Au-GaAs _{1− x} P _x and Au-Ga _{1− x} Al _x As Schottky barriers

M. López-Coronado Miguel Aguilar Manuel Martı́nez E. Calleja E. Muñoz

Year: 1983 Journal: Electronics Letters Vol: 19 (17)Pages: 666-668 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19830454

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Abstract

A novel technique based on pulse electroplating and surface treatment with very slow etching rate solutions has been applied to fabricate Au Schottky barriers on GaAs1−xPx and Ga1−xAlxAs. Device characteristics are compared to the behaviour of vacuum-deposited barriers. The present technique allows a simple and fast procedure to obtain Schottky barriers for material evaluation and device applications.

Keywords:

Electroplating Schottky diode Materials science Schottky barrier Optoelectronics Etching (microfabrication) Schottky effect Electronic engineering Nanotechnology Layer (electronics) Engineering

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Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electroplated Au-GaAs _{1− x} P _x and Au-Ga _{1− x} Al _x As Schottky barriers

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