Epitaxial Growth of BeZnSe on CaF2/Si(111) Substrate

Abstract

We have studied the growth of the II-VI compounds semiconductor BeZnSe on CaF2/Si(111) substrate by molecular beam epitaxy. A single crystalline BeZnSe layer was grown at 240°C. (111) peaks of X-ray diffraction confirmed that the BeZnSe is lattice matched to Si when the Be-content is 0.45, which is consistent with Vegard's law. The surface morphology was studied using an atomic force microscopy.