Pinch off in insulated-gate field-effect transistors

C. Goldberg; S.R. Hofstein; F.P. Heiman

doi:10.1109/proc.1964.2938

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Pinch off in insulated-gate field-effect transistors

C. Goldberg S.R. Hofstein F.P. Heiman

Year: 1964 Journal: Proceedings of the IEEE Vol: 52 (4)Pages: 414-415 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/proc.1964.2938

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Keywords:

Pinch Materials science Transistor Field-effect transistor Electrical engineering Engineering physics Optoelectronics Physics Mechanical engineering Engineering Voltage

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Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Pinch off in insulated-gate field-effect transistors

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