Insulated Gate Field Effect Transistors, IGFETs

S. D. Brotherton

doi:10.1007/978-3-319-00002-2_3

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Insulated Gate Field Effect Transistors, IGFETs

S. D. Brotherton

Year: 2013 Pages: 45-68

DOI: 10.1007/978-3-319-00002-2_3

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Keywords:

Threshold voltage MOSFET Saturation (graph theory) Velocity saturation Materials science Transistor Saturation current Optoelectronics Drain-induced barrier lowering Field-effect transistor Voltage Channel length modulation Thin-film transistor Electrical engineering Condensed matter physics Physics Engineering Nanotechnology Mathematics

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Insulated Gate Field Effect Transistors, IGFETs

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