Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas

Shengjun Zhou; Bin Cao; Sheng Liu

doi:10.1016/j.apsusc.2010.07.088

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Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas

Shengjun Zhou Bin Cao Sheng Liu

Year: 2010 Journal: Applied Surface Science Vol: 257 (3)Pages: 905-910 Publisher: Elsevier BV

DOI: 10.1016/j.apsusc.2010.07.088

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Keywords:

Photoresist Materials science Etching (microfabrication) Dry etching Inductively coupled plasma Surface roughness Etch pit density Optoelectronics Analytical Chemistry (journal) Sapphire Plasma etching Plasma RF power amplifier Fabrication Chamber pressure Reactive-ion etching Chemistry Layer (electronics) Nanotechnology Optics Composite material Metallurgy Laser

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas

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