The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition

K.J. Grannen; F. Xiong; R. P. H. Chang

doi:10.1557/jmr.1994.2341

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The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition

K.J. Grannen F. Xiong R. P. H. Chang

Year: 1994 Journal: Journal of materials research/Pratt's guide to venture capital sources Vol: 9 (9)Pages: 2341-2348 Publisher: Springer Nature

DOI: 10.1557/jmr.1994.2341

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Keywords:

Materials science Silicon nitride Silicon Chemical vapor deposition Nanocrystalline silicon Thin film Substrate (aquarium) Analytical Chemistry (journal) Crystalline silicon Etching (microfabrication) Sputtering Nanotechnology Optoelectronics Layer (electronics) Chemistry Amorphous silicon

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Topics

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced ceramic materials synthesis

Physical Sciences → Materials Science → Ceramics and Composites

The growth of silicon nitride crystalline films using microwave plasma enhanced chemical vapor deposition

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