CRYSTALLINE CARBON NITRIDE FILMS GROWN BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION

Abstract

The carbon nitride films were deposited on single crystalline Si(001) and polycrystalline diamond substrates using microwave plasma chemical vapor deposition (MPCVD) with CH 4 +N 2 as well as CH 4 +NH 3 mixtures as the reactive gas source, respectively. Different CH 4 /N 2 and CH 4 /NH 3 gas ratios were tested. The results showed that carbon nitride films with different nitrogen content could more readily be obtained using a mixture of CH 4 /N 2 rather than CH 4 /NH 3 . The films grown by different CH 4 /N 2 ratios showed different morphology, which was revealed by scanning electron microscopy (SEM). The crystalline carbon nitride films containing silicon were realized using a CH 4 :N 2 = 1:100 ratio. X-ray photoelectron spectroscopy (XPS), Auger electron microscopy (AES), Raman spectroscopy, and X-ray diffraction were used to characterize the composition and chemical bonding of the deposited films.