Reactive partially ionized beam deposition of AlN thin films

Jiayou Feng; Junqing Xie; Qingwei Mo

doi:10.1016/s0167-577x(97)00088-8

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Reactive partially ionized beam deposition of AlN thin films

Jiayou Feng Junqing Xie Qingwei Mo

Year: 1997 Journal: Materials Letters Vol: 33 (3-4)Pages: 133-136 Publisher: Elsevier BV

DOI: 10.1016/s0167-577x(97)00088-8

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Keywords:

Materials science Crystallite Stoichiometry Nitride Deposition (geology) Wafer Thin film Aluminium Hexagonal crystal system Composite material Chemical engineering Optoelectronics Nanotechnology Crystallography Metallurgy Layer (electronics) Physical chemistry

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Reactive partially ionized beam deposition of AlN thin films

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