JOURNAL ARTICLE

Reactive partially ionized beam deposition of AlN thin films

Jiayou FengJunqing XieQingwei Mo

Year: 1997 Journal:   Materials Letters Vol: 33 (3-4)Pages: 133-136   Publisher: Elsevier BV
Keywords:
Materials science Crystallite Stoichiometry Nitride Deposition (geology) Wafer Thin film Aluminium Hexagonal crystal system Composite material Chemical engineering Optoelectronics Nanotechnology Crystallography Metallurgy Layer (electronics) Physical chemistry

Metrics

6
Cited By
0.43
FWCI (Field Weighted Citation Impact)
15
Refs
0.62
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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