MOCVD Growth and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots

Abstract

InAs/GaAs quantum dots structures are grown by meta-organic chemical vapor deposition. The effects of growth temperatures on the structural and optical properties of quantum dots are investigated by the atomic force microscopy and photoluminescence. An areal density of 9.3×109cm2 and a strongly enhanced photoluminescence intensity are obtained at the temperature of 505°C, furthermore, the low and high growth temperature tend to form coalescent islands and decrease the intensity of photoluminescence spectra.