Scaling properties of InAs/GaAs self-assembled quantum dots

Abstract

We studied the scaling law for volume distribution of the self-assembled quantum dots grown by molecular-beam epitaxy of the Stranski-Krastanow mode. The scaling law was found to hold regardless of the annealing time and growth temperature. Also, we found the scaling law for the pair distribution of self-assembled quantum dots. Both the volume distribution and pair distribution agreed with the scaling functions for two-dimensional submonolayer homoepitaxy model with critical cluster size $i=1,$ which excludes adatom detachment from clusters.