Atomic Layer Deposition of Titanium Disulfide Thin Films

Abstract

Abstract Titanium disulfide thin films are grown by atomic layer deposition (ALD) at 400–500 °C using TiCl 4 and H 2 S as precursors. Soda‐lime glass, silicon, and thin films of TiN, ZnS, Rh, Ir, Pd, Pt, and Ru are used as substrates. Hexagonal (001)‐oriented TiS 2 is deposited on ZnS at 400 °C with growth rates of between 0.15 and 0.20 Å per cycle. Randomly oriented, hexagonal, platelike crystals are deposited on glass and TiN with a growth rate of 0.26 Å per cycle. Significant variations in surface morphologies were detected in TiS 2 films on various noble metals. TiS 2 was also grown on the pore walls of an alumina membrane.