Dry etching characteristics of LiNbO <sub>3</sub>

Philip Chung; C. M. Horwitz; Wenli Guo

doi:10.1049/el:19860329

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Dry etching characteristics of LiNbO ₃

Philip Chung C. M. Horwitz Wenli Guo

Year: 1986 Journal: Electronics Letters Vol: 22 (9)Pages: 484-485 Publisher: Institution of Engineering and Technology

DOI: 10.1049/el:19860329

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Abstract

We report a high etch selectivity of LiNbO3 with respect to Cr of 10:1 using the planar sputter etching technique in CF4 plasma. The etch rate can be further increased by an order of magnitude using an enhanced-discharge hollow-cathode sputter etching system.

Keywords:

Sputtering Etching (microfabrication) Materials science Dry etching Selectivity Cathode Plasma etching Optoelectronics Plasma Engraving Planar Nanotechnology Composite material Chemistry Thin film Electrical engineering Computer science Engineering

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Photorefractive and Nonlinear Optics

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Dry etching characteristics of LiNbO ₃

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