New optical capacitance model for GaAs MESFETs

Abstract

New empirical equations for simulating the optical and bias dependencies of the junction capacitances of the GaAs MESFET are presented in this paper. New linear and quasilogarithmic variations versus the incident optical power (PL) for gate-to-drain and gate-to-source capacitances (Cgd and Cgs), respectively, have been found. Experimental results show excellent agreement with the simulated values over a wide range of optical powers and bias conditions. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 26: 16–21, 2000.