Pulsed excimer laser ablated barium titanate thin films

Abstract

Thin films of BaTiO3 were deposited on platinum coated silicon substrates by excimer laser (248 nm) ablation at 600 °C or ex situ crystallized at about the same annealing temperature. Films deposited at 600 °C showed good crystallinity and were characterized for ferroelectricity, dielectric constant, dielectric loss, leakage current, and C-V characteristics. The films showed a dielectric constant of 220, a dissipation factor of 0.02, a leakage current of 1.8×10−6 A/cm2 at a bias of 5 V, and a charge storage density of about 40 fC/μm2 at a field of 0.15 MV/cm.