Resolution and aspect ratio in two-photon lithography of positive photoresist

Abstract

In this work, the authors report on investigations of two-photon lithography of positive photoresist. The dependency of the pattern linewidth on variation in the processing parameters, like the laser patterning velocity or power of the femtosecond laser oscillator, is presented. The influence of the scan velocity between 0.38 and 1.90 mm/s on the resolution is discussed for a layer thickness of 3.5 μm. By using a commercial positive photoresist, an aspect ratio of 5 has been realized for grid structures and the qualities of the produced structures are discussed.