JOURNAL ARTICLE
Amorphous ZnO Thin Film Nonlinear Resistor
Year: 1989 Journal: Japanese Journal of Applied Physics Vol: 28 (9A)Pages: L1493-L1493 Publisher: Institute of Physics
Abstract
Thin films which were evaporated from materials with mixed ZnO:Bi ceramics and ZnSe sintered powders on ITO glass substrates at 250∼450°C, exhibit good nonlinear current-voltage characteristics. This nonlinearity is considered to result from the reduction and oxidation of ZnSe during the evaporation process, and a randomly mixed system composed of mainly ZnO and residuals of Se and ZnSe is formed.
Keywords:
Materials science Evaporation Amorphous solid Thin film Resistor Vacuum evaporation Ceramic Nonlinear system Optoelectronics Composite material Chemical engineering Voltage Nanotechnology Crystallography Electrical engineering Chemistry Thermodynamics
Metrics
1
Cited By
0.00
FWCI (Field Weighted Citation Impact)
4
Refs
0.14
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Thin-Film Transistor Technologies
Physical Sciences → Engineering → Electrical and Electronic Engineering
Nanowire Synthesis and Applications
Physical Sciences → Engineering → Biomedical Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Related Documents
JOURNAL ARTICLE
Thin-film NiCr resistor
Journal: Journal of Vacuum Science and Technology Year: 1978 Vol: 15 (2)Pages: 370-372
JOURNAL ARTICLE
Barium Ruthenate Thin Film Resistor
Journal: Platinum Metals Review Year: 1986 Vol: 30 (3)Pages: 140-140
JOURNAL ARTICLE
Silicon-chromium thin-film resistor reliability
Journal: Vacuum Year: 1973 Vol: 23 (9)Pages: 345-345
JOURNAL ARTICLE
Thin film resistor materials and characteristics
Journal: Microelectronics Reliability Year: 1969 Vol: 8 (2)Pages: 153-153