Influence of oxygen content on the 1.54μm luminescence of Er-doped amorphous SiOx thin films

G. Wora Adeola; H. Rinnert; M. Vergnat

doi:10.1016/j.physe.2008.08.007

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Influence of oxygen content on the 1.54μm luminescence of Er-doped amorphous SiOx thin films

G. Wora Adeola H. Rinnert M. Vergnat

Year: 2008 Journal: Physica E Low-dimensional Systems and Nanostructures Vol: 41 (6)Pages: 1059-1062 Publisher: Elsevier BV

DOI: 10.1016/j.physe.2008.08.007

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Keywords:

Amorphous solid Materials science Photoluminescence Luminescence Annealing (glass) Amorphous silicon Analytical Chemistry (journal) Silicon Doping Thin film Infrared Optoelectronics Crystalline silicon Nanotechnology Crystallography Optics Chemistry Metallurgy Organic chemistry

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Influence of oxygen content on the 1.54μm luminescence of Er-doped amorphous SiOx thin films

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