Electrochemical Etching of the Semiconductor Lead Tin Telluride

Abstract

Convective currents during the Bridgman growth of a compound semiconductor lead to temperature fluctuations at the solid‐liquid interface. These temperature fluctuations in turn lead to microscopic compositional variations in the solid. Electrochemical principles have been applied to develop three etches which delineate the variations in the compound semiconductor, lead tin telluride, and allow optical studies of the growth kinetics of this material. Use of these etches has shown periodic lines during the initial growth, with indications of oscillatory instabilities developing in later stages of growth, and, finally, complete breakdown of the interface.