Optical And Semiconductor Properties Of Lead Telluride Coatings

K. Q. Zhang; J. S. Seeley; R. Hunneman; Gary Hawkins

doi:10.1117/12.960798

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Optical And Semiconductor Properties Of Lead Telluride Coatings

K. Q. Zhang J. S. Seeley R. Hunneman Gary Hawkins

Year: 1989 Journal: Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE Vol: 1112 Pages: 393-393 Publisher: SPIE

DOI: 10.1117/12.960798

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Abstract

The optical and semiconductor properties of lead telluride coatings are dependent on various factors contributing to its performance. In this paper, we will present the temperature dependent effects of single layer lead telluride coatings on the dispersion and absorption characteristics, absorption edge, and carrier concentration from 15 K to 436 K using both experimental and theoretical analysis.

Keywords:

Lead telluride Telluride Materials science Semiconductor Optoelectronics Absorption (acoustics) Layer (electronics) Dispersion (optics) Absorption edge Lead (geology) Cadmium telluride photovoltaics Engineering physics Optics Nanotechnology Metallurgy Composite material Physics

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Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Optical And Semiconductor Properties Of Lead Telluride Coatings

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