Thermal stability of copper interconnects fabricated by dry-etching process

Yasushi Igarashi; Tomomi Yamanobe; Toshio Ito

doi:10.1016/0040-6090(94)05801-6

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Thermal stability of copper interconnects fabricated by dry-etching process

Yasushi Igarashi Tomomi Yamanobe Toshio Ito

Year: 1995 Journal: Thin Solid Films Vol: 262 (1-2)Pages: 124-128 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(94)05801-6

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Keywords:

Passivation Materials science Annealing (glass) Tin Diffusion barrier Copper Dry etching Interconnection Oxidizing agent Etching (microfabrication) Thermal stability Optoelectronics Wafer Copper interconnect Electrical resistivity and conductivity Layer (electronics) Metallurgy Composite material Chemical engineering Chemistry Electrical engineering

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Copper Interconnects and Reliability

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Electronic Packaging and Soldering Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Thermal stability of copper interconnects fabricated by dry-etching process

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