Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge

P. Roca i Cabarrocas; J.Z. Liu; H.R. Park; Atsushi Maruyama; S. Wagner

doi:10.1016/0022-3093(89)90109-9

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Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge

P. Roca i Cabarrocas J.Z. Liu H.R. Park Atsushi Maruyama S. Wagner

Year: 1989 Journal: Journal of Non-Crystalline Solids Vol: 114 Pages: 190-192 Publisher: Elsevier BV

DOI: 10.1016/0022-3093(89)90109-9

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Keywords:

Substrate (aquarium) Materials science Kinetics Deposition (geology) Glow discharge Silicon Analytical Chemistry (journal) Work function Optoelectronics Chemistry Plasma Nanotechnology

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Substrate temperature dependence of the growth kinetics and opto-electronic properties of a-Si:H films deposited by RF glow discharge

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