JOURNAL ARTICLE
Photo-Assisted Metal Organic Chemical Vapor Deposition Preparation of Polycrystalline ZnS:Mn Films for Thin Film Electroluminescent Devices
Katsuhiko HirabayashiHaruki Kozawaguchi
Year: 1989 Journal: Japanese Journal of Applied Physics Vol: 28 (5R)Pages: 814-814 Publisher: Institute of Physics
Abstract
Polycrystalline ZnS:Mn films with good crystallinity are grown by photo-assisted MOCVD using dimethylzinc and diethylsulphide. The growth temperature is decreased from 550 to 400°C by photo-irradiation (high-pressure mercury lamp) and no dead layer results. Patterned ZnS films can also be grown by this method. Thin film electroluminescent devices fabricated using these films have lower threshold voltages.
Keywords:
Materials science Electroluminescence Crystallite Thin film Metalorganic vapour phase epitaxy Dimethylzinc Chemical vapor deposition Crystallinity Optoelectronics Layer (electronics) Mercury-vapor lamp Analytical Chemistry (journal) Chemical engineering Nanotechnology Epitaxy Composite material Chemistry Zinc Metallurgy
Metrics
8
Cited By
1.17
FWCI (Field Weighted Citation Impact)
12
Refs
0.76
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Quantum Dots Synthesis And Properties
Physical Sciences → Materials Science → Materials Chemistry
Chalcogenide Semiconductor Thin Films
Physical Sciences → Engineering → Electrical and Electronic Engineering
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
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