Memory Effect in AC Thin Film ZnS:Mn Electroluminescent Devices Prepared by Metal Organic Chemical Vapor Deposition

Abstract

AC thin film ZnS:Mn electroluminescent devices prepared by metal organic chemical vapor deposition have been found to exhibit a larger and more stable memory effect than devices prepared by EB-evaporation. The memory margin is about 15% of the threshold voltage for a device having an Mn concentration of 0.8 wt%. The memory margin is relatively stable. The results show that except for the first 300 hours, the brightness-voltage characteristic exhibits almost the same hysteresis shape during 2000 hours of aging at a constant brightness of 500 cd/m 2 , using a 5 kHz sinusoidal wave.