Field emission properties of AlN nanostructures

Xiaohong Ji; Jie Deng; Weifeng Zhou; Pengcheng Chen; Fei Chen

doi:10.1109/ivesc.2010.5644140

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Field emission properties of AlN nanostructures

Xiaohong Ji Jie Deng Weifeng Zhou Pengcheng Chen Fei Chen

Year: 2010 Vol: 441 Pages: 363-364

DOI: 10.1109/ivesc.2010.5644140

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Abstract

Herein, a simple approach through vapor transport and condensation process for the synthesis of various large-scale AlN nanostructures has been demonstrated using AICI ₃ powder and NH ₃ as starting materials. Their structural and field emission (FE) properties were characterized. The nanostructure dependences of FE properties and the possible mechanism involved have been investigated and discussed.

Keywords:

Nanostructure Condensation Materials science Field (mathematics) Field electron emission Nanotechnology Physics Thermodynamics Quantum mechanics Mathematics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Field emission properties of AlN nanostructures

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