Field emission properties of boron nanostructures

Abstract

Boron nanostructures (nanowires and nanotubes) have been thought as ideal nanomaterials for building optoelectronic nanodevices because of their high conductivity, large elastic modulus and high melting-point. In our studies, it is found that boron nanostructures have a low turn-on field and high emission uniformity. Moreover, boron nanostructures can endure a high emission current, which suggests that they may have potential application in field emission area.