A new silicon nitride mask technology for synchrotron radiation x-ray lithography: First results

C.C.G. Visser; J.E. Uglow; D.W. Burns; G Margaret Wells; R. Redaelli; F. Cerrina; H. Guckel

doi:10.1016/0167-9317(87)90053-0

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A new silicon nitride mask technology for synchrotron radiation x-ray lithography: First results

C.C.G. Visser J.E. Uglow D.W. Burns G Margaret Wells R. Redaelli F. Cerrina H. Guckel

Year: 1987 Journal: Microelectronic Engineering Vol: 6 (1-4)Pages: 299-304 Publisher: Elsevier BV

DOI: 10.1016/0167-9317(87)90053-0

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Keywords:

X-ray lithography Lithography Resist Materials science Silicon nitride Synchrotron radiation Next-generation lithography Extreme ultraviolet lithography Silicon Optoelectronics Optics Photolithography Blank Nitride Electron-beam lithography Nanotechnology Physics Layer (electronics)

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Advancements in Photolithography Techniques

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Surface Polishing Techniques

Physical Sciences → Engineering → Biomedical Engineering

Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

A new silicon nitride mask technology for synchrotron radiation x-ray lithography: First results

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