X-ray phase-shift mask for proximity x-ray lithography with synchrotron radiation

Abstract

In proximity X-ray lithography at the feasible gap size of approximately 10 micrometer, using attenuated phase-shift masks is the most effective method of achieving high resolution pattern transfer at the feature size of sub-100 nm. In this study, we have investigated the absorption and the phase-shift controllability of X-ray masks with various absorber materials by simulation and found that the phase- shift mask structure with Cu absorber is one of the best choices for proximity X-ray lithography using synchrotron radiation.