Light emission of silicon oxynitride films prepared by reactive sputtering of silicon

Shyankay Jou; I-Che Liaw; Yu‐Chia Cheng; Chia‐Hui Li

doi:10.1016/j.jlumin.2012.06.037

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Light emission of silicon oxynitride films prepared by reactive sputtering of silicon

Shyankay Jou I-Che Liaw Yu‐Chia Cheng Chia‐Hui Li

Year: 2012 Journal: Journal of Luminescence Vol: 134 Pages: 853-857 Publisher: Elsevier BV

DOI: 10.1016/j.jlumin.2012.06.037

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Keywords:

X-ray photoelectron spectroscopy Silicon oxynitride Photoluminescence Materials science Silicon Sputtering Raman spectroscopy Amorphous solid Analytical Chemistry (journal) Electroluminescence Silicon oxide Amorphous silicon Annealing (glass) Crystalline silicon Thin film Optoelectronics Nanotechnology Chemistry Chemical engineering Crystallography Optics Silicon nitride Layer (electronics) Metallurgy

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Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Light emission of silicon oxynitride films prepared by reactive sputtering of silicon

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