Silicon nitride and oxynitride films prepared by ion beam reactive sputtering

V. A. Burdovitsin

doi:10.1016/0040-6090(83)90285-7

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Silicon nitride and oxynitride films prepared by ion beam reactive sputtering

V. A. Burdovitsin

Year: 1983 Journal: Thin Solid Films Vol: 105 (3)Pages: 197-202 Publisher: Elsevier BV

DOI: 10.1016/0040-6090(83)90285-7

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Keywords:

Silicon Silicon oxynitride Sputtering Silicon nitride Substrate (aquarium) Nitrogen Nitride Materials science Oxygen Ion Ion beam Analytical Chemistry (journal) Thin film Inorganic chemistry Chemistry Nanotechnology Optoelectronics Layer (electronics)

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon nitride and oxynitride films prepared by ion beam reactive sputtering

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