Scanning tunneling spectroscopy studies of the Au–H-terminated Si interface

Abstract

The interface of hydrogen-terminated Si(111) and evaporated Au overlayers was investigated by scanning tunneling spectroscopy. It is shown that the first monolayers of Au atoms chemically bind to the silicon surface and no Schottky barrier is formed at this initial stage of gold growth on silicon. Deposited Au films of higher thickness present rectification in the I–V characteristics. Evidence for migration of Si atoms up to the surface of a 50 Å Au film is presented.