Frédérique DeshoursE. BergeaultL. JalletB. Huyart
Abstract This article presents a microwave active Load‐Pull measurement system, using two wide‐band six‐port junctions in order to have nonlinear characterization of power transistors. Experimental results performed on a 900‐μm MESFET for different operating classes are reported and discussed. © 1994 John Wiley & Sons, Inc.
Souheil BensmidaP. PoiréFadhel M. Ghannouchi
Frédérique DeshoursE. BergeaultL. JalletB. Huyart
Soubhi Abou ChahineB. HuyartE. BergeaultL. Jallet
Fadhel M. GhannouchiMohammad Hashmi
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