This paper describes an active load-pull measurement system, using two six-port junctions for nonlinear characterization of power transistors. Load-pull measurements on a 600 /spl mu/m MESFET have been performed at 2 GHz.< >
Frédérique DeshoursE. BergeaultL. JalletB. Huyart
Di-Luân LêFadhel M. Ghannouchi
Souheil BensmidaP. PoiréFadhel M. Ghannouchi
G. BerghoffO. GibratE. BergeaultB. HuyartL. Jallet
R. HajjiFadhel M. GhannouchiR.G. Bosisio