Chemical Vapor Deposition Based Preparation on Porous Silica Films

Abstract

Porous silica films with a low dielectric constant, k , have been prepared from the gas phase using a mixture of Si(NCO) 4 , N(CH 3 ) 3 and (C 6 H 5 ) 2 Si(N(CH 3 ) 2 ) 2 . After desorption of phenyl groups chemically bonded with Si in the as-deposited film, the film showed a porosity of 48%, and k as low as 2.5. Low-field resistivity and breakdown strength were about 10 15 Ω·cm, and 1.3 MV/cm due to pinhales, respectively.