Improvement of the Crystallinity of Silicon Films Deposited by Hot-Wire Chemical Vapor Deposition with Negative Substrate Bias

Lei Zhang; Honglie Shen; Jiayi You

doi:10.1007/s11664-013-2608-x

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Improvement of the Crystallinity of Silicon Films Deposited by Hot-Wire Chemical Vapor Deposition with Negative Substrate Bias

Lei Zhang Honglie Shen Jiayi You

Year: 2013 Journal: Journal of Electronic Materials Vol: 42 (8)Pages: 2464-2469 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-013-2608-x

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Keywords:

Crystallinity Materials science Substrate (aquarium) Silicon Chemical vapor deposition Raman spectroscopy Scanning electron microscope Crystallization Microcrystalline silicon Chemical engineering Composite material Metallurgy Crystalline silicon Optoelectronics Optics Amorphous silicon

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Improvement of the Crystallinity of Silicon Films Deposited by Hot-Wire Chemical Vapor Deposition with Negative Substrate Bias

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