InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550nm

JOURNAL ARTICLE

Year: 2012 Journal: Journal of Crystal Growth Vol: 378 Pages: 134-136 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2012.11.023

Keywords:

Quantum well Optoelectronics Materials science Condensed matter physics Gallium arsenide Optics Physics Laser

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Spectroscopy and Laser Applications

Physical Sciences → Chemistry → Spectroscopy

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering