Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices

Shin-ichiro Gozu; T. Mozume

doi:10.1016/j.jcrysgro.2015.02.073

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Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices

Shin-ichiro Gozu T. Mozume

Year: 2015 Journal: Journal of Crystal Growth Vol: 425 Pages: 102-105 Publisher: Elsevier BV

DOI: 10.1016/j.jcrysgro.2015.02.073

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Keywords:

Quantum well Crystal (programming language) Optoelectronics Materials science Gallium arsenide Condensed matter physics Optics Physics Laser Computer science

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Advanced Semiconductor Detectors and Materials

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Crystal quality of InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices

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