Photo‐assisted chemical vapor deposition of gallium sulfide thin films

Abstract

Polycrystalline films of gallium sulfide may be deposited from [( t Bu)GaS], (see Fig.) by photo‐assisted CVD at temperatures lower than by thermal CVD. It is found that the stoichiometry of the films is dependent on the wavelength window. The films are however found to be of the thermo‐dynamic hexagonal phase rather than the metastable cubic phase produced by thermal CVD. magnified image