JOURNAL ARTICLE

Operating principles of bipolar transistor magnetic sensors

A.W. VinalN.A. Masnari

Year: 1984 Journal:   IEEE Transactions on Electron Devices Vol: 31 (10)Pages: 1486-1494   Publisher: Institute of Electrical and Electronics Engineers

Abstract

Dual-collector bipolar transistor structures have been evaluated and found to be sensitive to an applied magnetic field. In particular, the magnetic field results in unequal currents to the two collectors. The output signal is taken as a differential voltage developed across the output load resistors. The mechanism giving rise to the unequal collector currents appears to be emitter-injection modulation caused by the applied magnetic field. The magnetic field causes the injection from one portion of the emitter to be enhanced while suppressing injection elsewhere thus setting up unequal currents to the two collectors. A simplified theory is presented to explain the behavior of these devices. The theory is found to be in general agreement with experimental results obtained from a number of different device configurations.

Keywords:
Common emitter Resistor Bipolar junction transistor Magnetic field Transistor Voltage Electrical engineering Bipolar transistor biasing Heterostructure-emitter bipolar transistor Magnetic reactance Physics Magnetic circuit Magnetic amplifier Current injection technique Materials science Engineering Differential amplifier Magnetic pressure Amplifier CMOS Magnetization

Metrics

31
Cited By
3.35
FWCI (Field Weighted Citation Impact)
5
Refs
0.93
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Magnetic Field Sensors Techniques
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Sensor Technology and Measurement Systems
Physical Sciences →  Computer Science →  Computer Networks and Communications
Electrical and Bioimpedance Tomography
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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