Abstract

Lateral bipolar magnetic sensors have been developed whose output signal is measured as a differential voltage between two collectors. Devices can be designed either to respond to magnetic fields applied perpendicular to the surface or to parallel fields. The experiments have resulted in an understanding of the basic operating principles and have led to the design of optimum magnetic sensors. Whereas previous investigations of dual-collector lateral bipolar transistor structures have attributed the unequal collector currents (resulting from the application of a magnetic field) to "carrier deflection" in the base, our experiments clearly demonstrate that it is due to nonuniform injection from the emitter. The applied magnetic field leads to a voltage variation along the emitter-base junction and this, in turn, results in nonuniform carrier injection into the base and subsequent unequal currents to the two collectors.

Keywords:
Common emitter Bipolar junction transistor Magnetic field Voltage Perpendicular Deflection (physics) Electrical engineering Materials science Heterostructure-emitter bipolar transistor Optoelectronics Transistor Nuclear magnetic resonance Physics Engineering Optics

Metrics

9
Cited By
1.83
FWCI (Field Weighted Citation Impact)
0
Refs
0.85
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Magnetic Field Sensors Techniques
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Sensor Technology and Measurement Systems
Physical Sciences →  Computer Science →  Computer Networks and Communications
Non-Destructive Testing Techniques
Physical Sciences →  Engineering →  Mechanical Engineering

Related Documents

JOURNAL ARTICLE

Operating principles of bipolar transistor magnetic sensors

A.W. VinalN.A. Masnari

Journal:   IEEE Transactions on Electron Devices Year: 1984 Vol: 31 (10)Pages: 1486-1494
JOURNAL ARTICLE

Indium Phosphide Heterojunction Bipolar Transistors as Magnetic Field Sensors

R. OxlandGary W. PatersonAndrew R. LongFaiz Rahman

Journal:   IEEE Transactions on Electron Devices Year: 2011 Vol: 58 (5)Pages: 1534-1540
JOURNAL ARTICLE

SELF-OSCILLATING MICROELECTRONIC MAGNETIC FIELD SENSORS WITH BIPOLAR AND FIELD MAGNETIC-SENSITIVE TRANSISTORS

I.O. Osadchuk

Journal:   Scientific notes of Taurida National V I Vernadsky University Series Technical Sciences Year: 2023 Pages: 354-363
JOURNAL ARTICLE

Class of bipolar motion sensors

R. Dalpadado

Journal:   Electronics Letters Year: 1993 Vol: 29 (6)Pages: 514-515
© 2026 ScienceGate Book Chapters — All rights reserved.