Preparation and Deposition Mechanism of Ferroelectric PbTiO3 Thin Films by Chemical Vapor Deposition

Abstract

Lead titanate films were deposited on titanium substrate by chemical vapor deposition using reactant gas mixtures of Pb, , and oxygen. The chemical vapor deposition of is a thermally activated process with an apparent activation energy of 21.8 kcal/mol. Auger electron spectroscopy analysis was performed. Impurities were not found in the film after 3.5 keV Ar ion sputtering for 12 min. The crystal growth along the (001) preferred orientation is increased with an increase in the deposition temperature. The deposition mechanism was discussed. At 650°C, when the gas flow rate is less than 700 sccm, the deposition reaction is controlled by mass transport; with a gas flow rate greater than 700 sccm, the reaction is controlled by the surface reaction. The critical gas flow rate at which the deposition mechanism switches from the mass transport to the surface reaction increases with increasing deposition temperature.