Preparation and Characterization of 3C-SiC Heteroepitaxial Layers on Si(111)

Mitsugu Yamanaka; Keiko Ikoma

doi:10.1557/proc-242-543

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Preparation and Characterization of 3C-SiC Heteroepitaxial Layers on Si(111)

Mitsugu Yamanaka Keiko Ikoma

Year: 1992 Journal: MRS Proceedings Vol: 242 Publisher: Cambridge University Press

DOI: 10.1557/proc-242-543

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Keywords:

Materials science Hall effect Chemical vapor deposition Layer (electronics) Electron mobility Charge-carrier density Epitaxy Characterization (materials science) Optoelectronics Electrical resistivity and conductivity Nanotechnology Doping

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Silicon Carbide Semiconductor Technologies

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Preparation and Characterization of 3C-SiC Heteroepitaxial Layers on Si(111)

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