Charge ordering in quasi one-dimensional semiconductor (NbSe<sub>4</sub>)<sub>3</sub>I

Damir Starešinić; K. Biljaković; P. Lunkenheimer; A. Loidl

doi:10.1051/jp4:2005131012

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Charge ordering in quasi one-dimensional semiconductor (NbSe₄)₃I

Damir Starešinić K. Biljaković P. Lunkenheimer A. Loidl

Year: 2005 Journal: Journal de Physique IV (Proceedings) Vol: 131 Pages: 59-62 Publisher: Springer Science+Business Media

DOI: 10.1051/jp4:2005131012

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Abstract

We have observed surprisingly huge dielectric response in a nominally semiconducting quasi one-dimensional system (NbSe 4 ) 3 I below structural phase transition at 274 K.While the relaxation time shows activated increase on cooling almost following the increase of dc resistivity, the dielectric constant goes through a maximum at 150 K.We discuss the results in the view of charge reordering at 274 K.

Keywords:

Dielectric Condensed matter physics Relaxation (psychology) Semiconductor Charge (physics) Electrical resistivity and conductivity Phase (matter) Materials science Phase transition Charge carrier Physics Optoelectronics Quantum mechanics Psychology

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Organic and Molecular Conductors Research

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Solid-state spectroscopy and crystallography

Physical Sciences → Materials Science → Materials Chemistry

Crystal Structures and Properties

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Charge ordering in quasi one-dimensional semiconductor (NbSe₄)₃I

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