Metalorganic Chemical Vapor Deposition of Complex Metal Oxide Thin Films by Liquid Source Chemical Vapor Deposition

Abstract

The implementation of ferroelectric thin films in advanced semiconductor devices is near; facile integration at ULSI geometries requires chemical vapor deposition (CVD) process technology. The low volatility and thermal stability of many of the existing source reagents has driven the development of liquid source CVD, in which composition is set by volumetric metering of liquids followed by flash vaporization. The methodology as well as early results for Ba 1- x Sr x TiO 3 , Pb 1- x (La x Zr 1- y Ti y ) 1- x /4 O 3 and SrBi 2 Ta 2 O 9 thin films, which are among the best reported for any deposition method, will be reviewed. These results establish liquid source CVD as a leading candidate to become the predominant deposition technology enabling the integration of ferroelectric thin films in ULSI devices.