Theoretical tunneling current characteristics of the SIS (semiconductor-insulator-semiconductor) diode

Abstract

The dc current-voltage characteristic of the SIS (semiconductor-insulator-semiconductor) diode is calculated using a simple two-band model for the insulating barrier. The effect of various parameters such as insulator thickness, image force barrier reduction, interface charge, temperature, and semiconductor doping density are investigated as well as the effect of current tunnelling through the semiconductor space-charge region. Several interesting results are observed including the negative resistance feature for the degenerate p-i-n system. This negative resistance is more pronounced than that of the p-n tunnel diode and exhibits some unusal temperature behavior.