Characteristics of electron tunneling in metal-insulator-degenerate semiconductor junctions

L. L. Chang; P. J. Stiles; L. Esaki

doi:10.1016/0038-1098(67)90731-4

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Characteristics of electron tunneling in metal-insulator-degenerate semiconductor junctions

L. L. Chang P. J. Stiles L. Esaki

Year: 1967 Journal: Solid State Communications Vol: 5 (10)Pages: ix-ix Publisher: Elsevier BV

DOI: 10.1016/0038-1098(67)90731-4

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Keywords:

Quantum tunnelling Degenerate energy levels Semiconductor Condensed matter physics Insulator (electricity) Electron Metal Degenerate semiconductor Materials science Physics Optoelectronics Quantum mechanics Metallurgy

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Characteristics of electron tunneling in metal-insulator-degenerate semiconductor junctions

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