Electrical Characterization of Deep Trap Properties in High-k Thin-Film HfO₂ Dielectric

Abstract

Deep-trap properties of high-dielectric-constant (k) HfO 2 thin films are investigated by deep-level transient spectroscopy and capacitance-voltage methods. The hole traps of the HfO 2 dielectric deposited on a p-type Si substrate by sputtering are investigated in a metal-oxide-semiconductor structure over a temperature range of 300–500 K. The potential depth, cross section and concentration of hole traps are estimated to be about 2.5 eV, 1.8 × 10 −16 cm 2 and 1.0 × 10 16 cm −3 , respectively.