Abstract In‐doped n‐type semiconducting magnesium zinc oxide (MZO) thin films have been fabricated on MgO (100) and LaAlO 3 (LAO) (100) substrates under low oxygen ambient by pulse laser deposition (PLD). X‐ray diffraction and HRTEM studies reveal the presence of pure cubic phase MZO (c‐MZO). High quality cube‐on‐cube epitaxy is obtained in films grown on MgO. For films deposit on LAO, they exhibit heteroepitaxial relationship of (100) c‐MZO ‖ (100) LAO and (011) c‐MZO ‖ (010) LAO . All as‐prepared c‐MZO thin films show good optical transmittance over the whole visible spectrum. Samples with In dopant concentration above 8 at% yield an electrical resistivity of less than 10 –2 Ω cm and can be used as Transparent Conducing Oxide (TCO). (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Heungsoo KimR.C.Y. AuyeungAlberto Piqué
Shihui YuLinghong DingChuang XueLi ChenW.F. Zhang
Masataka NakamuraKimihiro IkutaTakanori AokiAkio SuzukiTatsuhiko MatsushitaMasahiro Okuda
Shinji KANEDATakanori AokiTatsuhiko MatsushitaAkio SuzukiMasahiro Okuda