Analysis of mechanical properties of N2 in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

Kang-San Kim; Ki-Bong Han; Gwiy‐Sang Chung

doi:10.1016/j.physb.2009.09.055

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Analysis of mechanical properties of N2 in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

Kang-San Kim Ki-Bong Han Gwiy‐Sang Chung

Year: 2009 Journal: Physica B Condensed Matter Vol: 405 (2)Pages: 513-516 Publisher: Elsevier BV

DOI: 10.1016/j.physb.2009.09.055

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Keywords:

Materials science Chemical vapor deposition Thin film Crystallite Dopant Doping Nanoindentation Analytical Chemistry (journal) Composite material Modulus In situ Nanotechnology Chemical engineering Optoelectronics Chemistry Metallurgy Organic chemistry

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Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Silicon Carbide Semiconductor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Analysis of mechanical properties of N2 in situ doped polycrystalline 3C-SiC thin films by chemical vapor deposition using single-precursor hexamethyildisilane

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